Samsung Begins HBM4 Memory Shipments, Plans HBM4E Sampling for Late 2026
Samsung Electronics has officially commenced mass production and customer shipments of its HBM4 memory, marking a significant advancement in high-bandwidth memory technology. The company has also announced plans to begin sampling its next-generation HBM4E memory to customers in the second half of 2026, positioning itself at the forefront of memory innovation for AI and high-performance computing applications.
Technical Specifications and Performance
Samsung's HBM4 memory is manufactured using a 6th-generation 10nm-class DRAM process known as "1c," combined with a 4nm logic base die for enhanced performance. The memory achieves speeds of 11.7Gbps per pin, surpassing the JEDEC industry standard of 8Gbps by 46%. With 2,048 pins, this translates to a total bandwidth of 3.3 terabytes per second—a 2.7x increase over the previous HBM3E standard.
JEDEC's standardization of HBM4 involved reducing per-pin bandwidth from HBM3E's 9.6Gbps while doubling the pin count from 1,024 to 2,048. This design choice prioritizes improved power efficiency and better thermal management, addressing critical challenges in high-performance computing environments.
Advanced Features and Future Developments
The current HBM4 implementation utilizes 12-layer stacking technology, available in capacities ranging from 24GB to 36GB. Samsung has indicated flexibility to adapt to customer needs, potentially introducing a 16-layer design with capacities up to 48GB. The memory incorporates low-voltage through silicon vias and an optimized power distribution network, resulting in 40% better power efficiency compared to previous generations.
Thermal performance has also seen substantial improvements, with Samsung's HBM4 offering 10% lower heat resistance and 30% better heat dissipation than HBM3E. The company believes there is room for further enhancement, suggesting future chips could reach 13Gbps per pin.
Market Strategy and Industry Impact
Samsung anticipates significant demand for its memory products, projecting sales to triple compared to 2025 levels. In preparation, the company is actively expanding HBM4 production capacity. The strategic decision to adopt advanced nodes like the 1c DRAM and 4nm logic processes for HBM4 represents a departure from conventional approaches, aiming to secure substantial performance headroom for evolving customer requirements.
"By leveraging our process competitiveness and design optimization, we are able to secure substantial performance headroom, enabling us to satisfy our customers' escalating demands for higher performance, when they need them," stated Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics.
Looking Ahead to HBM4E
Following the commercial rollout of HBM4, Samsung plans to sample HBM4E memory to customers in the second half of 2026. This next-generation memory will represent further advancements in bandwidth, capacity, and efficiency. Additionally, the company intends to provide custom HBM samples tailored to specific customer specifications in 2027, demonstrating its commitment to flexible, customer-driven innovation.
Conclusion
Samsung's shipment of HBM4 memory and planned HBM4E sampling underscore the company's leadership in high-bandwidth memory technology. With substantial improvements in bandwidth, power efficiency, and thermal management, these advancements are poised to accelerate AI computing capabilities and high-performance applications. As demand for advanced memory solutions continues to grow, Samsung's strategic investments in next-generation technologies position it to meet the evolving needs of the computing industry.